Silicon carbide (SiC) is a wide-bandgap semiconductor whose properties make it suitable for devices and integrated circuits operating at high voltage, high frequency and high temperature. This study explains why SiC is so useful in electronics; offers guidance on the various processing steps (growth, doping, etching, contact formation, dielectrics and more); and describes how these are integrated in device manufacture.
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Informacje dodatkowe o Process Technology For Silicon Carbide Devices:
Wydawnictwo: angielskie
Data wydania: b.d
Kategoria: Popularnonaukowe
ISBN:
Liczba stron: 0
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